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BUK7628-100A,118N-Channel 100 V 47A (Tc) 166W (Tc) Surface Mount D2PAK
1:$1.1280
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ABRmicro #.ABR2045-BUK762-962239
ManufacturerNexperia USA Inc.
MPN #.BUK7628-100A,118
Estimated Lead Time-
SampleGet Free Sample
DatasheetBUK7628-100A(PDF)
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In Stock: 13
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 1.1280
Ext. Price$ 1.1280
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.1280$1.1280
10$0.9220$9.2230
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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P-Channel 12 V 10A (Ta) 1.7W (Ta), 13mW (Tc) Surface Mount DFN2020MD-6 Technical Specifications
SeriesTrenchMOS™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C47A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
GradeAutomotive
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)3100 pF @ 25 V
MfrNexperia USA Inc.
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation166W (Tc)
QualificationAEC-Q101
RDS(on) Drain-to-Source On Resistance28mOhm @ 25A, 10V
Package Type (Mfr.)D2PAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 1mA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The BUK7628-100A,118 is a robust N-channel MOSFET manufactured by Nexperia USA Inc. It is designed for surface mounting in a D2PAK package and is suitable for handling a continuous current of 47A at a voltage of up to 100V. The component operates efficiently with a power dissipation capacity of 166W when mounted on a suitable heat sink (Tc). It features an on-resistance of 28mOhm at a gate-source voltage of 10V and a drain current of 25A, along with a gate-source voltage rating of ±20V. This MOSFET meets automotive-grade standards, making it suitable for use in high-reliability environments.
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