BUK7610-55AL,118N-Channel 55 V 75A (Tc) 300W (Tc) Surface Mount D2PAK
1:$2.4190
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ABRmicro #.ABR2045-BUK761-1018645
ManufacturerNexperia USA Inc.
MPN #.BUK7610-55AL,118
Estimated Lead Time-
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Datasheet
BUK7610-55AL(PDF)
BUK7610-55AL(PDF)
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 2.4190
Ext. Price$ 2.4190
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$2.4190$2.4190
10$2.0340$20.3360
100$1.6460$164.5810
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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P-Channel 12 V 10A (Ta) 1.7W (Ta), 13mW (Tc) Surface Mount DFN2020MD-6 Technical Specifications
SeriesTrenchMOS™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusObsolete
Base Product NumberBUK7610
Continuous Drain Current (ID) @ 25°C75A (Tc)
Drain-to-Source Voltage (VDS)55 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)124 nC @ 10 V
GradeAutomotive
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)6280 pF @ 25 V
MfrNexperia USA Inc.
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation300W (Tc)
QualificationAEC-Q101
RDS(on) Drain-to-Source On Resistance10mOhm @ 25A, 10V
Package Type (Mfr.)D2PAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 1mA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Datasheets
PCN Design/Specification
PCN Obsolescence/ EOL
PCN Packaging
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The BUK7610-55AL,118 is a robust N-channel MOSFET manufactured by Nexperia USA Inc. It is designed for high-power applications, featuring a 55V drain-to-source voltage and a maximum continuous current of 75A, with a power dissipation capacity of up to 300W when mounted on a case. This surface-mount device comes in a D2PAK package, offering efficient thermal management. The MOSFET exhibits low on-state resistance of 10mOhm when conducting at 25A and 10V, making it suitable for minimizing energy loss in power conversion and switching circuits. It also meets automotive standards, ensuring reliability in demanding environmental conditions.
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