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BUK755R2-40B,127N-Channel 40 V 75A (Tc) 203W (Tc) Through Hole TO-220AB

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ABRmicro #.ABR2045-BUK755-1030763
ManufacturerNexperia USA Inc.
MPN #.BUK755R2-40B,127
Estimated Lead Time-
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DatasheetDatasheetBUK755R2-40B(PDF)
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In Stock: 16
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 17, 2024
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Technical Specifications
SeriesTrenchMOS™
Packaging
Tube
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C75A (Tc)
Drain-to-Source Voltage (VDS)40 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)52 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)3789 pF @ 25 V
MfrNexperia USA Inc.
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation203W (Tc)
RDS(on) Drain-to-Source On Resistance5.2mOhm @ 25A, 10V
Package Type (Mfr.)TO-220AB
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 1mA
Package / CaseTO-220-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
BUK755R2-40B
PCN Design/Specification
Mult DEV Label Change 12/Jun/2024
PCN Obsolescence/ EOL
EOL 30/Dec/2015
PCN Packaging
All Dev Label Chgs 2/Aug/2020
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The BUK755R2-40B,127 is an electronic component manufactured by Nexperia USA Inc. It is an N-channel MOSFET designed for through-hole mounting, housed in a TO-220AB package. The device is capable of withstanding a maximum voltage of 40V and a continuous current of up to 75A, with a power dissipation of 203W under optimal thermal conditions. It features a gate-source threshold voltage of 4V at a test current of 1mA and has an input capacitance of 3789 pF at 25V. This MOSFET is tailored for efficient power switching applications where high performance is required.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.