BUK754R0-55B,127N-Channel 55 V 75A (Tc) 300W (Tc) Through Hole TO-220AB
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ABRmicro #.ABR2045-BUK754-1017415
ManufacturerNexperia USA Inc.
MPN #.BUK754R0-55B,127
Estimated Lead Time-
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Datasheet
BUK754R0-55B(PDF)
BUK754R0-55B(PDF)
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Packaging
Tube
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesTrenchMOS™
Packaging
Tube
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C75A (Tc)
Drain-to-Source Voltage (VDS)55 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)86 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)6776 pF @ 25 V
MfrNexperia USA Inc.
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation300W (Tc)
RDS(on) Drain-to-Source On Resistance4mOhm @ 25A, 10V
Package Type (Mfr.)TO-220AB
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 1mA
Package / CaseTO-220-3
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Datasheets
PCN Design/Specification
PCN Obsolescence/ EOL
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The BUK754R0-55B,127, manufactured by Nexperia USA Inc., is a N-Channel MOSFET designed for high-efficiency power management. It is capable of handling a maximum drain-source voltage of 55V and a continuous drain current of 75A when properly mounted, with a power dissipation of up to 300W, making it suitable for demanding electrical applications. Housed in a TO-220AB package, this MOSFET features a gate charge of 86 nC at 10V and a capacitance of 6776 pF at 25V. The device also supports a gate-source voltage of ±20V, allowing for robust operation in variable conditions.
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