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BUK625R0-40C,118N-Channel 40 V 90A (Tc) 158W (Tc) Surface Mount DPAK

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ABRmicro #.ABR2045-BUK625-951031
ManufacturerNexperia USA Inc.
MPN #.BUK625R0-40C,118
Estimated Lead Time-
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DatasheetDatasheetBUK625R0-40C(PDF)
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In Stock: 5
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesTrenchMOS™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C90A (Tc)
Drain-to-Source Voltage (VDS)40 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)88 nC @ 10 V
GradeAutomotive
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)5200 pF @ 25 V
MfrNexperia USA Inc.
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation158W (Tc)
QualificationAEC-Q101
RDS(on) Drain-to-Source On Resistance5mOhm @ 25A, 10V
Package Type (Mfr.)DPAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±16V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.8V @ 1mA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
BUK625R0-40C
PCN Design/Specification
Mult DEV Label Change 12/Jun/2024
PCN Obsolescence/ EOL
Mult Devices EOL 12/Jul/2018Mult Devices EOL 30/Jun/2018
PCN Packaging
All Dev Label Chgs 2/Aug/2020Label Chg 12/Mar/2017
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The BUK625R0-40C,118 is an N-Channel MOSFET manufactured by Nexperia USA Inc. designed for surface mount applications, housed in a DPAK package. It offers a maximum voltage rating of 40V and can handle continuous currents up to 90A, with a power dissipation capacity of 158W under specified conditions. The MOSFET features an input capacitance of 88 nC at a gate-source voltage of 10V, making it suitable for efficient switching operations in automotive environments.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.