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BUK6212-40C,118N-Channel 40 V 50A (Tc) 80W (Tc) Surface Mount DPAK

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ABRmicro #.ABR2045-BUK621-1018704
ManufacturerNexperia USA Inc.
MPN #.BUK6212-40C,118
Estimated Lead Time-
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DatasheetDatasheetBUK6212-40C(PDF)
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In Stock: 12
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesTrenchMOS™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C50A (Tc)
Drain-to-Source Voltage (VDS)40 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)33.9 nC @ 10 V
GradeAutomotive
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1900 pF @ 25 V
MfrNexperia USA Inc.
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation80W (Tc)
QualificationAEC-Q101
RDS(on) Drain-to-Source On Resistance11.2mOhm @ 12A, 10V
Package Type (Mfr.)DPAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±16V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.8V @ 1mA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
BUK6212-40C
PCN Design/Specification
Mult DEV Label Change 12/Jun/2024
PCN Obsolescence/ EOL
Mult Devices EOL 12/Jul/2018Mult Devices EOL 30/Jun/2018
PCN Packaging
All Dev Label Chgs 2/Aug/2020Increase of Empty Pockets on Leader 08/Nov/2013
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The BUK6212-40C,118 is a surface-mount N-Channel MOSFET manufactured by Nexperia USA Inc. Designed for automotive applications, this component operates with a 40V drain-source voltage and is capable of handling a continuous current of up to 50A at the case (Tc). It offers a power dissipation capacity of 80W, making it suitable for high-power operations. The MOSFET features a gate charge of 33.9 nC at 10V, enabling efficient switching. Its DPAK package ensures convenient mounting and thermal performance on circuit boards.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.