BUK6210-55C,118N-Channel 55 V 78A (Tc) 128W (Tc) Surface Mount DPAK
N/A
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-BUK621-1015330
ManufacturerNexperia USA Inc.
MPN #.BUK6210-55C,118
Estimated Lead Time-
SampleGet Free Sample
Datasheet
BUK6210-55C,118 Datasheet(PDF)
BUK6210-55C,118 Datasheet(PDF)
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed AuthenticityTechnical SupportFast RefundFree Shipping (over $960)Issue an Invoice24/7 Manual Service In Stock: 16
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Send Inquiry
Add To RFQ List
Related Parts
Bipolar (BJT) Transistor PNP 65 V 100 mA 100MHz 200 mW Surface Mount SOT-323
PMPB10UPX$0.3510
P-Channel 12 V 10A (Ta) 1.7W (Ta), 13mW (Tc) Surface Mount DFN2020MD-6
Technical Specifications
SeriesTrenchMOS™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C78A (Tc)
Drain-to-Source Voltage (VDS)55 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)63 nC @ 10 V
GradeAutomotive
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)4000 pF @ 25 V
MfrNexperia USA Inc.
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation128W (Tc)
QualificationAEC-Q101
RDS(on) Drain-to-Source On Resistance9.6mOhm @ 15A, 10V
Package Type (Mfr.)DPAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±16V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.8V @ 1mA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desire
info@Abrmicro.com
info@Abrmicro.comExtended Links
Datasheets
PCN Design/Specification
PCN Obsolescence/ EOL
PCN Packaging
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The BUK6210-55C,118 is an N-Channel MOSFET manufactured by Nexperia USA Inc., designed for high-efficiency power management applications. It operates at a maximum drain-source voltage of 55 V and can handle a continuous current of 78A with a power dissipation capacity of 128W, both measured at the case temperature (Tc). The device is encased in a surface-mount DPAK package, allowing for efficient thermal management and space-saving designs. It features a low on-resistance of 9.6 milliohms when subjected to 15A at a gate voltage of 10V, which reduces power losses and enhances overall performance.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.