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BUK6207-55C,118N-Channel 55 V 90A (Tc) 158W (Tc) Surface Mount DPAK

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ABRmicro #.ABR2045-BUK620-1033145
ManufacturerNexperia USA Inc.
MPN #.BUK6207-55C,118
Estimated Lead Time-
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DatasheetDatasheetBUK6207-55C(PDF)
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In Stock: 20
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 17, 2024
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Technical Specifications
SeriesTrenchMOS™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C90A (Tc)
Drain-to-Source Voltage (VDS)55 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)82 nC @ 10 V
GradeAutomotive
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)5160 pF @ 25 V
MfrNexperia USA Inc.
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation158W (Tc)
QualificationAEC-Q101
RDS(on) Drain-to-Source On Resistance7.8mOhm @ 25A, 10V
Package Type (Mfr.)DPAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.8V @ 1mA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
BUK6207-55C
PCN Design/Specification
Mult DEV Label Change 12/Jun/2024
PCN Obsolescence/ EOL
Mult Devices EOL 12/Jul/2018Mult Devices EOL 30/Jun/2018
PCN Packaging
All Dev Label Chgs 2/Aug/2020Mult Devices Label 30/Sep/2018
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The BUK6207-55C,118 is an N-Channel metal-oxide-semiconductor field-effect transistor (MOSFET) manufactured by Nexperia USA Inc. It is designed for surface mounting in a DPAK package. The component can handle a maximum drain current of 90A and a breakdown voltage of 55V, with a power dissipation capacity of 158W under standard conditions. It features a gate threshold voltage of 2.8V at a gate current of 1mA and possesses an input capacitance of 5160 pF at 25V. This MOSFET is suitable for applications requiring efficient power management and high current handling.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.