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BSS84AKW-BXP-Channel 50 V 150mA (Ta) 830mW (Tc) Surface Mount SOT-323

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ABRmicro #.ABR2045-BSS84A-956520
ManufacturerNexperia USA Inc.
MPN #.BSS84AKW-BX
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetBSS84AKW,115 Datasheet(PDF)
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In Stock: 19
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C150mA (Ta)
Drain-to-Source Voltage (VDS)50 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))5V, 10V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)0.35 nC @ 5 V
GradeAutomotive
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)36 pF @ 25 V
MfrNexperia USA Inc.
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation830mW (Tc)
QualificationAEC-Q101
RDS(on) Drain-to-Source On Resistance7.5Ohm @ 100mA, 10V
Package Type (Mfr.)SOT-323
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.1V @ 250µA
Package / CaseSC-70, SOT-323
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
BSS84AKW,115 Datasheet
PCN Design/Specification
Mult DEV Label Change 12/Jun/2024
PCN Obsolescence/ EOL
Mid-Year Product Disc 30/Jun/2017
PCN Packaging
All Dev Label Chgs 2/Aug/2020
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)
Additional Details
The BSS84AKW-BX is a P-Channel MOSFET manufactured by Nexperia USA Inc. designed for surface mount applications, featuring a compact SOT-323 package. It operates with a maximum voltage of 50 V and can handle a continuous current of up to 150 mA (Ta) and a power dissipation of 830 mW (Tc). The component is suited for automotive applications and offers a gate charge of 0.35 nC at 5 V, with a gate threshold voltage of 2.1V at 250µA. This MOSFET provides efficient switching performance tailored to automotive and compact electronic environments.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.