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BSS138BKW,115N-Channel 60 V 320mA (Ta) 260mW (Ta), 830mW (Tc) Surface Mount SOT-323

1:$0.2830

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-BSS138-960817
ManufacturerNexperia USA Inc.
MPN #.BSS138BKW,115
Estimated Lead Time6 Weeks
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In Stock: 176549
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 0.2830
Ext. Price$ 0.2830
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.2830$0.2830
10$0.1970$1.9660
100$0.1000$9.9880
500$0.0810$40.3750
1000$0.0610$60.5630
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesTrenchMOS™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberBSS138
Continuous Drain Current (ID) @ 25°C320mA (Ta)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)0.7 nC @ 4.5 V
GradeAutomotive
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)56 pF @ 10 V
MfrNexperia USA Inc.
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation260mW (Ta), 830mW (Tc)
QualificationAEC-Q101
RDS(on) Drain-to-Source On Resistance1.6Ohm @ 320mA, 10V
Package Type (Mfr.)SOT-323
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)1.6V @ 250µA
Package / CaseSC-70, SOT-323
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)
Additional Details
The BSS138BKW,115 is a compact, surface-mount N-Channel MOSFET manufactured by Nexperia USA Inc. It operates with a maximum voltage of 60V and can handle a current of 320mA at this voltage. The device features a power dissipation capacity of 260mW in ambient conditions (Ta) and up to 830mW when mounted on a PCB with a heatsink (Tc). The MOSFET has a low on-state resistance of 1.6 Ohms at a 10V gate-source voltage. Encased in a SOT-323 package, it is designed for efficient performance in limited space environments.
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