BSP220,115P-Channel 200 V 225mA (Ta) 1.5W (Ta) Surface Mount SOT-223
1:$0.6930
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ABRmicro #.ABR2045-BSP220-1032522
ManufacturerNexperia USA Inc.
MPN #.BSP220,115
Estimated Lead Time-
SampleGet Free Sample
Datasheet
BSP220(PDF)
BSP220(PDF)
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 17, 2024
* Quantity
Unit Price$ 0.6930
Ext. Price$ 0.6930
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.6930$0.6930
10$0.5990$5.9930
100$0.4150$41.5440
500$0.3460$173.1880
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusNRND(Not Recommended for New Designs)
Base Product NumberBSP220
Continuous Drain Current (ID) @ 25°C225mA (Ta)
Drain-to-Source Voltage (VDS)200 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeP-Channel
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)90 pF @ 25 V
MfrNexperia USA Inc.
Mounting StyleSurface Mount
Operating Temperature150°C (TJ)
Maximum Power Dissipation1.5W (Ta)
RDS(on) Drain-to-Source On Resistance12Ohm @ 200mA, 10V
Package Type (Mfr.)SOT-223
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.8V @ 1mA
Package / CaseTO-261-4, TO-261AA
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Datasheets
PCN Design/Specification
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The BSP220 transistor, manufactured by Nexperia USA Inc., is a P-Channel MOSFET designed for efficient performance in a variety of electronic devices. It operates with a maximum voltage of 200 V and a current rating of 225 mA when mounted on a surface using its SOT-223 package. Its power dissipation capacity is rated at 1.5W. The device exhibits a gate-source threshold voltage of 2.8V at a current of 1mA and has a total gate charge capacitance of 90 pF at 25 V. With a capable breakdown voltage of 10V, this MOSFET is suitable for compact electronic designs requiring reliable switching functionality.
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