BSH105,235N-Channel 20 V 1.05A (Ta) 417mW (Ta) Surface Mount TO-236AB
1:$0.2900
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ABRmicro #.ABR2045-BSH105-1003955
ManufacturerNexperia USA Inc.
MPN #.BSH105,235
Estimated Lead Time-
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Datasheet
BSH105(PDF)
BSH105(PDF)
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 0.2900
Ext. Price$ 0.2900
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.2900$0.2900
10$0.2260$2.2630
100$0.1360$13.6000
500$0.1250$62.6880
1000$0.0850$85.0000
2000$0.0790$157.2500
5000$0.0750$377.1880
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusNRND(Not Recommended for New Designs)
Base Product NumberBSH105
Continuous Drain Current (ID) @ 25°C1.05A (Ta)
Drain-to-Source Voltage (VDS)20 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))1.8V, 4.5V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)3.9 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)152 pF @ 16 V
MfrNexperia USA Inc.
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation417mW (Ta)
RDS(on) Drain-to-Source On Resistance200mOhm @ 600mA, 4.5V
Package Type (Mfr.)TO-236AB
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±8V
VGS(th) Gate-to-Source Threshold Voltage (Max.)570mV @ 1mA (Typ)
Package / CaseTO-236-3, SC-59, SOT-23-3
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Datasheets
PCN Design/Specification
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)
Additional Details
The BSH105,235 is a surface-mounted N-Channel MOSFET manufactured by Nexperia USA Inc. It is housed in a TO-236AB package and is designed to handle a drain current of 1.05A and power dissipation of 417mW, both under standard ambient conditions. This MOSFET operates efficiently with gate-source voltages of 1.8V and 4.5V, and it can withstand gate-source voltages up to ±8V. Capable of managing up to 20V in voltage across the drain-source, it possesses an input capacitance of 152 pF at 16V, making it suitable for various electronic applications where space and energy efficiency are crucial.
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