2N7002BKW,115N-Channel 60 V 310mA (Ta) 275mW (Ta) Surface Mount SOT-323
1:$0.2660
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ABRmicro #.ABR2045-2N7002-1037781
ManufacturerNexperia USA Inc.
MPN #.2N7002BKW,115
Estimated Lead Time6 Weeks
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Datasheet
2N7002BKW Datasheet(PDF)
2N7002BKW Datasheet(PDF)
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 17, 2024
* Quantity
Unit Price$ 0.2660
Ext. Price$ 0.2660
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.2660$0.2660
10$0.1820$1.8170
100$0.0880$8.8190
500$0.0740$37.1880
1000$0.0510$51.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesTrenchMOS™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product Number2N7002
Continuous Drain Current (ID) @ 25°C310mA (Ta)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)0.6 nC @ 4.5 V
GradeAutomotive
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)50 pF @ 10 V
MfrNexperia USA Inc.
Mounting StyleSurface Mount
Operating Temperature150°C (TJ)
Maximum Power Dissipation275mW (Ta)
QualificationAEC-Q101
RDS(on) Drain-to-Source On Resistance1.6Ohm @ 500mA, 10V
Package Type (Mfr.)SOT-323
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.1V @ 250µA
Package / CaseSC-70, SOT-323
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Datasheets
PCN Assembly/Origin
PCN Design/Specification
PCN Packaging
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)
Additional Details
The 2N7002BKW,115 is a compact N-Channel MOSFET manufactured by Nexperia USA Inc., designed for use in low power switching applications. It features a drain-source voltage rating of 60 V and can handle a continuous drain current of 310 mA at ambient temperature, dissipating up to 275 mW. Encased in a SOT-323 surface-mount package, this MOSFET offers low on-state resistance of 1.6 Ohms at 500 mA and 10 V, ensuring efficient current conduction. The device also boasts a low gate charge of 0.6 nC at 4.5 V and a total gate capacitance of 50 pF at 10 V, contributing to its fast switching capabilities.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.