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TIP100Bipolar (BJT) Transistor NPN - Darlington 60 V 8 A 4MHz 80 W Through Hole TO-220-3
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ABRmicro #.ABR2045-TIP100-780303
ManufacturerCentral Semiconductor
MPN #.TIP100
Estimated Lead Time-
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In Stock: 4
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Shipping DateNovember 6, 2024
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Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 600mA 200MHz Through Hole TO-78-6 Technical Specifications
Series-
Packaging
Bulk
Lifecycle StatusObsolete
Collector Current (Iᴄ)@25°C8 A
Collector Cut-off Current (Iᴄᴇs)(Max.)50µA
DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 3A, 4V
Frequency - Transition4MHz
MfrCentral Semiconductor Corp
Mounting StyleThrough Hole
Operating Temperature-65°C ~ 150°C (TJ)
Power - Max80 W
Package Type (Mfr.)TO-220-3
Transistor TypeNPN - Darlington
Vce Saturation (Max) @ Ib, Ic2.5V @ 80mA, 8A
Collector-Emitter Breakdown Voltage (Max.)60 V
Package / CaseTO-220-3
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Environmental Information
PCN Obsolescence/ EOL
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)