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TIP41B PBFREEBipolar (BJT) Transistor NPN 80 V 6 A 3MHz 65 W Through Hole TO-220-3

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ABRmicro #.ABR276-TIP41B-693227
ManufacturerCentral Semiconductor
MPN #.TIP41B PBFREE
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetTIP41(A,B,C) (PDF)
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In Stock: 11
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
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Bulk
Shipping DateDecember 24, 2024
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Technical Specifications
Series-
Packaging
Bulk
Lifecycle StatusObsolete
Base Product NumberTIP41
Collector Current (Iᴄ)@25°C6 A
Collector Cut-off Current (Iᴄᴇs)(Max.)700µA
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 300mA, 4V
Frequency - Transition3MHz
MfrCentral Semiconductor Corp
Mounting StyleThrough Hole
Operating Temperature-65°C ~ 150°C (TJ)
Power - Max65 W
Package Type (Mfr.)TO-220-3
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic1.5V @ 600mA, 6A
Collector-Emitter Breakdown Voltage (Max.)80 V
Package / CaseTO-220-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
TIP41(A,B,C)
Environmental Information
RoHS Cert
PCN Obsolescence/ EOL
EOL 2-10-23
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
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Additional Details
The TIP41B PBFREE from Central Semiconductor is a NPN bipolar junction transistor designed for medium power amplification and switching applications. It features a maximum voltage rating of 80V and a current capacity of 6A, with a power dissipation capability of up to 65W. Housed in a TO-220-3 through-hole package, this transistor offers a transition frequency of 3MHz. It has a collector-emitter saturation voltage of 1.5V at 600mA current and demonstrates a DC current gain (hFE) of 30 at 300mA and 4V. Additionally, the part exhibits a leakage current (Icbo) of 700µA.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.