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2N5058 PBFREEBipolar (BJT) Transistor NPN 300 V 150 mA 160MHz 1 W Through Hole TO-39

1:$3.9750

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ABRmicro #.ABR276-2N5058-693024
MPN #.2N5058 PBFREE
Estimated Lead Time2 Weeks
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In Stock: 247
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Min.&Mult.1
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Bulk
Shipping DateDecember 24, 2024
* Quantity
Unit Price$3.9750
Ext. Price$3.9750
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$3.9750$3.9750
10$3.4040$34.0430
100$2.9390$293.8880
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
Series-
Packaging
Bulk
Lifecycle StatusActive
Collector Current (Iᴄ)@25°C150 mA
Collector Cut-off Current (Iᴄᴇs)(Max.)50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce35 @ 30mA, 25V
Frequency - Transition160MHz
MfrCentral Semiconductor Corp
Mounting StyleThrough Hole
Operating Temperature-65°C ~ 200°C (TJ)
Power - Max1 W
Package Type (Mfr.)TO-39
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic1V @ 3mA, 30mA
Collector-Emitter Breakdown Voltage (Max.)300 V
Package / CaseTO-205AD, TO-39-3 Metal Can
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Datasheets
Environmental Information
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0075 (With an operating frequency not less than 100 MHz; No import duty applies)
Related Parts
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RF Transistor NPN 20V 400mA 1.2GHz 1W Through Hole TO-39
Bipolar (BJT) Transistor Array 2 NPN (Dual) 40V 600mA 250MHz 600mW Through Hole TO-78-6
Bipolar (BJT) Transistor PNP 45 V 100 mA 100MHz 350 mW Surface Mount SOT-23
Bipolar (BJT) Transistor NPN 40 V 200 mA 300MHz 275 mW Surface Mount SOT-323
Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 600mA 200MHz Through Hole TO-78-6
Bipolar (BJT) Transistor NPN 80 V 6 A 3MHz 65 W Through Hole TO-220-3
Additional Details
The 2N5058 PBFREE is an NPN bipolar junction transistor manufactured by Central Semiconductor, offering a maximum voltage of 300 V and a current capacity of 150 mA. Housed in a TO-39 through-hole package, it supports a frequency of up to 160 MHz and a power dissipation of 1 W. The transistor has a DC current gain of 35 at 30 mA and 25 V, with a collector-base cut-off current (ICBO) of 50 nA. It also features a collector-emitter saturation voltage of 1 V at 3 mA and 30 mA, making it suitable for various electronic circuit designs requiring reliable switching and amplification capabilities.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.