BC857BR TR PBFREEBipolar (BJT) Transistor PNP 45 V 100 mA 100MHz 350 mW Surface Mount SOT-23
1:$0.3590
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR276-BC857B-693661
ManufacturerCentral Semiconductor
MPN #.BC857BR TR PBFREE
Estimated Lead Time13 Weeks
SampleGet Free Sample
Datasheet
BC856 -58 Serie... (PDF)
BC856 -58 Serie... (PDF)
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Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateDecember 24, 2024
* Quantity
Unit Price$0.3590
Ext. Price$0.3590
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.3590$0.3590
10$0.2790$2.7940
100$0.1670$16.6810
500$0.1550$77.5630
1000$0.1060$106.2500
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberBC857
Collector Current (Iᴄ)@25°C100 mA
Collector Cut-off Current (Iᴄᴇs)(Max.)15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce220 @ 2mA, 5V
Frequency - Transition100MHz
MfrCentral Semiconductor Corp
Mounting StyleSurface Mount
Operating Temperature-65°C ~ 150°C (TJ)
Power - Max350 mW
Package Type (Mfr.)SOT-23
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic650mV @ 5mA, 100mA
Collector-Emitter Breakdown Voltage (Max.)45 V
Package / CaseTO-236-3, SC-59, SOT-23-3
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Datasheets
Environmental Information
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0075 (With an operating frequency not less than 100 MHz; No import duty applies)
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Additional Details
The BC857BR TR PBFREE is a PNP bipolar junction transistor (BJT) manufactured by Central Semiconductor. It is designed for surface mount applications, fitting within the compact SOT-23 package. This transistor operates with a maximum voltage of 45 V and can handle a continuous current of 100 mA. It features a transition frequency of 100 MHz and a power dissipation capacity of up to 350 mW. The device exhibits a collector cutoff current (ICBO) of 15 nA, with a voltage drop of 650 mV when conducting a collector current of 100 mA at a base current of 5 mA. The transistor also has a DC current gain (hFE) of 220 at a collector current of 2 mA and a collector-emitter voltage of 5 V.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.