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PN2906A PBFREEBipolar (BJT) Transistor PNP 60 V 600 mA 200MHz 625 mW Through Hole TO-92-3

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ABRmicro #.ABR2045-PN2906-787340
ManufacturerCentral Semiconductor
MPN #.PN2906A PBFREE
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetPN2906(A).PN2907(A)(PDF)
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In Stock: 8
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Shipping DateNovember 6, 2024
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Technical Specifications
Series-
Packaging
Bulk
Lifecycle StatusObsolete
Base Product NumberPN2906
Collector Current (Iᴄ)@25°C600 mA
Collector Cut-off Current (Iᴄᴇs)(Max.)10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA, 10V
Frequency - Transition200MHz
MfrCentral Semiconductor Corp
Mounting StyleThrough Hole
Operating Temperature-65°C ~ 150°C (TJ)
Power - Max625 mW
Package Type (Mfr.)TO-92-3
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic1.6V @ 50mA, 500mA
Collector-Emitter Breakdown Voltage (Max.)60 V
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
PN2906(A).PN2907(A)
Environmental Information
RoHS Cert
PCN Obsolescence/ EOL
PNP EOL 6/Oct/2021
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0075 (With an operating frequency not less than 100 MHz; No import duty applies)