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CWDM3011N TR13 PBFREEN-Channel 30 V 11A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
1:$0.5070
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-CWDM30-894032
ManufacturerCentral Semiconductor
MPN #.CWDM3011N TR13 PBFREE
Estimated Lead Time16 Weeks
SampleGet Free Sample
DatasheetCWDM3011N(PDF)
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In Stock: 1923
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 9, 2024
* Quantity
Unit Price$ 0.5070
Ext. Price$ 0.5070
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.5070$0.5070
10$0.4310$4.3100
100$0.3000$30.0000
500$0.2340$117.0000
1000$0.1910$191.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberCWDM3011
Continuous Drain Current (ID) @ 25°C11A (Ta)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)6.3 nC @ 5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)860 pF @ 15 V
MfrCentral Semiconductor Corp
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2.5W (Ta)
RDS(on) Drain-to-Source On Resistance20mOhm @ 11A, 10V
Package Type (Mfr.)8-SOIC
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3V @ 250µA
Package / Case8-SOIC (0.154", 3.90mm Width)
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)