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CTLDM8002A-M621H BKP-Channel 50 V 280mA (Ta) 1.6W (Ta) Surface Mount TLM621H

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ABRmicro #.ABR2045-CTLDM8-729059
ManufacturerCentral Semiconductor
MPN #.CTLDM8002A-M621H BK
Estimated Lead Time-
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DatasheetDatasheetCTLDM8002A-M621H(PDF)
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In Stock: 6
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
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Shipping DateNovember 8, 2024
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Technical Specifications
Series-
Packaging
Bulk
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C280mA (Ta)
Drain-to-Source Voltage (VDS)50 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))5V, 10V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)0.72 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)70 pF @ 25 V
MfrCentral Semiconductor Corp
Mounting StyleSurface Mount
Operating Temperature-65°C ~ 150°C (TJ)
Maximum Power Dissipation1.6W (Ta)
RDS(on) Drain-to-Source On Resistance2.5Ohm @ 500mA, 10V
Package Type (Mfr.)TLM621H
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.5V @ 250µA
Package / Case6-XFDFN Exposed Pad
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
CTLDM8002A-M621H
Environmental Information
RoHS Cert
PCN Obsolescence/ EOL
Mult Devices EOL 07/Aug/2018
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)