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CTLDM7120-M621H TRN-Channel 20 V 1A (Ta) 1.6W (Ta) Surface Mount TLM621H

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ABRmicro #.ABR2045-CTLDM7-868452
ManufacturerCentral Semiconductor
MPN #.CTLDM7120-M621H TR
Estimated Lead Time-
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DatasheetDatasheetCTLDM7120-M621H(PDF)
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In Stock: 18
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 9, 2024
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C1A (Ta)
Drain-to-Source Voltage (VDS)20 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))1.5V, 4.5V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)2.4 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)220 pF @ 10 V
MfrCentral Semiconductor Corp
Mounting StyleSurface Mount
Operating Temperature-65°C ~ 150°C (TJ)
Maximum Power Dissipation1.6W (Ta)
RDS(on) Drain-to-Source On Resistance100mOhm @ 500mA, 4.5V
Package Type (Mfr.)TLM621H
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)8V
VGS(th) Gate-to-Source Threshold Voltage (Max.)1.2V @ 1mA
Package / Case6-XFDFN Exposed Pad
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
CTLDM7120-M621H
Environmental Information
RoHS Cert
PCN Obsolescence/ EOL
Mult Devices EOL 07/Aug/2018
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)