ABR MCRO Logo
Image is for reference only, the actual product serves as the standard.
CP591X-2N2907A-CT20Bipolar (BJT) Transistor PNP 60 V 600 mA 200MHz Surface Mount Die

1:$115.3900

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-CP591X-726811
ManufacturerCentral Semiconductor
MPN #.CP591X-2N2907A-CT20
Estimated Lead Time10 Weeks
SampleGet Free Sample
DatasheetDatasheetCP591X-2N2907A(PDF)
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed Authenticity
Technical Support
Fast Refund
Free Shipping (over $960)
Issue an Invoice
24/7 Manual Service
In Stock: 2
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tray
Shipping DateNovember 6, 2024
* Quantity
Unit Price$ 115.3900
Ext. Price$ 115.3900
Add To Cart
Send Target Price
* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$115.3900$115.3900
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Related Parts
2N3393 PBFREE$0.3300
Central Semiconductor
Bipolar (BJT) Transistor NPN 25 V 120MHz Through Hole TO-92-3
2N5058 PBFREE$3.7410
Central Semiconductor
Bipolar (BJT) Transistor NPN 300 V 150 mA 160MHz 1 W Through Hole TO-39
2N5109 PBFREEN/A
Central Semiconductor
RF Transistor NPN 20V 400mA 1.2GHz 1W Through Hole TO-39
2N5794N/A
Central Semiconductor
Bipolar (BJT) Transistor Array 2 NPN (Dual) 40V 600mA 250MHz 600mW Through Hole TO-78-6
BC857BR TR PBFREE$0.3380
Central Semiconductor
Bipolar (BJT) Transistor PNP 45 V 100 mA 100MHz 350 mW Surface Mount SOT-23
MD2905N/A
Central Semiconductor
Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 600mA 200MHz Through Hole TO-78-6
TIP41B PBFREEN/A
Central Semiconductor
Bipolar (BJT) Transistor NPN 80 V 6 A 3MHz 65 W Through Hole TO-220-3
Technical Specifications
Series-
Packaging
Tray
Lifecycle StatusActive
Collector Current (Iᴄ)@25°C600 mA
Collector Cut-off Current (Iᴄᴇs)(Max.)10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA, 10V
Frequency - Transition200MHz
MfrCentral Semiconductor Corp
Mounting StyleSurface Mount
Operating Temperature-65°C ~ 150°C (TJ)
Package Type (Mfr.)Die
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic1.6V @ 50mA, 500mA
Collector-Emitter Breakdown Voltage (Max.)60 V
Package / CaseDie
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
CP591X-2N2907AWafer, Chip Storage and Handling Instr
Environmental Information
RoHS Cert
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)