ABR MCRO Logo
Image is for reference only, the actual product serves as the standard.
CP373-CTLDM303N-WNN-Channel 30 V 3.6A (Ta) Surface Mount Die

N/A

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-CP373--732743
ManufacturerCentral Semiconductor
MPN #.CP373-CTLDM303N-WN
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetCP373(PDF)
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed Authenticity
Technical Support
Fast Refund
Free Shipping (over $960)
Issue an Invoice
24/7 Manual Service
In Stock: 15
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Bulk
Shipping DateNovember 8, 2024
* Quantity
Send Inquiry
Add To RFQ List
Related Parts
2N3393 PBFREE$0.3300
Central Semiconductor
Bipolar (BJT) Transistor NPN 25 V 120MHz Through Hole TO-92-3
2N5058 PBFREE$3.7410
Central Semiconductor
Bipolar (BJT) Transistor NPN 300 V 150 mA 160MHz 1 W Through Hole TO-39
2N5109 PBFREEN/A
Central Semiconductor
RF Transistor NPN 20V 400mA 1.2GHz 1W Through Hole TO-39
2N5794N/A
Central Semiconductor
Bipolar (BJT) Transistor Array 2 NPN (Dual) 40V 600mA 250MHz 600mW Through Hole TO-78-6
BC857BR TR PBFREE$0.3380
Central Semiconductor
Bipolar (BJT) Transistor PNP 45 V 100 mA 100MHz 350 mW Surface Mount SOT-23
MD2905N/A
Central Semiconductor
Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 600mA 200MHz Through Hole TO-78-6
TIP41B PBFREEN/A
Central Semiconductor
Bipolar (BJT) Transistor NPN 80 V 6 A 3MHz 65 W Through Hole TO-220-3
Technical Specifications
Series-
Packaging
Bulk
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C3.6A (Ta)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))2.5V, 4.5V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)13 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)590 pF @ 10 V
MfrCentral Semiconductor Corp
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation-
RDS(on) Drain-to-Source On Resistance78mOhm @ 1.8A, 2.5V
Package Type (Mfr.)Die
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)12V
VGS(th) Gate-to-Source Threshold Voltage (Max.)1.2V @ 250µA
Package / CaseDie
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
CP373
Environmental Information
RoHS Cert
PCN Obsolescence/ EOL
CP373 18/Apr/2019
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.29.0040 (Unmounted chips, dice and wafers; No import duty applies)