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CDM22012-800LRFP SLN-Channel 800 V 12A (Ta) 40W (Tc) Through Hole TO-220FP

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ABRmicro #.ABR2045-CDM220-725001
ManufacturerCentral Semiconductor
MPN #.CDM22012-800LRFP SL
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetCDM22012-800LRFP(PDF)
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In Stock: 16
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 8, 2024
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Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberCDM22012
Continuous Drain Current (ID) @ 25°C12A (Ta)
Drain-to-Source Voltage (VDS)800 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)52.4 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1090 pF @ 100 V
MfrCentral Semiconductor Corp
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation40W (Tc)
RDS(on) Drain-to-Source On Resistance450mOhm @ 6A, 10V
Package Type (Mfr.)TO-220FP
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-220-3 Full Pack
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
CDM22012-800LRFP
Environmental Information
RoHS Cert
PCN Obsolescence/ EOL
CDM220 EOL 4/Feb/2021
Simulation Models
CDM22012-800LRFP Spice Model
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)