CDM22010-650 SLN-Channel 650 V 10A (Ta) 2W (Ta), 156W (Tc) Through Hole TO-220-3
1:$1.6340
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ABRmicro #.ABR2045-CDM220-787812
ManufacturerCentral Semiconductor
MPN #.CDM22010-650 SL
Estimated Lead Time-
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 9, 2024
* Quantity
Unit Price$ 1.6340
Ext. Price$ 1.6340
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.6340$1.6340
10$1.3550$13.5500
100$1.0770$107.7000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberCDM22010
Continuous Drain Current (ID) @ 25°C10A (Ta)
Drain-to-Source Voltage (VDS)650 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)20 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1168 pF @ 25 V
MfrCentral Semiconductor Corp
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2W (Ta), 156W (Tc)
RDS(on) Drain-to-Source On Resistance1Ohm @ 5A, 10V
Package Type (Mfr.)TO-220-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-220-3
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Environmental Information
PCN Obsolescence/ EOL
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)