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BU426Bipolar (BJT) Transistor NPN 375 V 6 A 115 W Through Hole TO-218

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ABRmicro #.ABR2045-BU426-743705
ManufacturerCentral Semiconductor
MPN #.BU426
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetPower Transistors TO-218 Case NPN(PDF)
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In Stock: 9
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Bulk
Shipping DateNovember 6, 2024
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Technical Specifications
Series-
Packaging
Bulk
Lifecycle StatusObsolete
Collector Current (Iᴄ)@25°C6 A
Collector Cut-off Current (Iᴄᴇs)(Max.)-
DC Current Gain (hFE) (Min) @ Ic, Vce-
Frequency - Transition-
MfrCentral Semiconductor Corp
Mounting StyleThrough Hole
Operating Temperature-
Power - Max115 W
Package Type (Mfr.)TO-218
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic1.5V @ 500mA, 2.5A
Collector-Emitter Breakdown Voltage (Max.)375 V
Package / CaseTO-218-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
Power Transistors TO-218 Case NPN
Environmental Information
RoHS Cert
Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)