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BU406 PBFREEBipolar (BJT) Transistor NPN 200 V 7 A 10MHz 60 W Through Hole TO-220-3

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ABRmicro #.ABR2045-BU406 -738637
ManufacturerCentral Semiconductor
MPN #.BU406 PBFREE
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetBU406 - BU408(PDF)
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In Stock: 7
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Bulk
Shipping DateNovember 6, 2024
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Technical Specifications
Series-
Packaging
Bulk
Lifecycle StatusObsolete
Base Product NumberBU406
Collector Current (Iᴄ)@25°C7 A
Collector Cut-off Current (Iᴄᴇs)(Max.)100nA
DC Current Gain (hFE) (Min) @ Ic, Vce-
Frequency - Transition10MHz
MfrCentral Semiconductor Corp
Mounting StyleThrough Hole
Operating Temperature-65°C ~ 150°C (TJ)
Power - Max60 W
Package Type (Mfr.)TO-220-3
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic1V @ 500mA, 5A
Collector-Emitter Breakdown Voltage (Max.)200 V
Package / CaseTO-220-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
BU406 - BU408
Environmental Information
RoHS Cert
PCN Obsolescence/ EOL
BU406/MJE13007 20/Jan/2022
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL LevelNot Required
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)