2N6123 PBFREEBipolar (BJT) Transistor NPN 80 V 4 A 2.5MHz 40 W Through Hole TO-220-3
1:$1.6900
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ABRmicro #.ABR2045-2N6123-712031
ManufacturerCentral Semiconductor
MPN #.2N6123 PBFREE
Estimated Lead Time-
SampleGet Free Sample
Datasheet
2N6121 thru 2N6124(PDF)
2N6121 thru 2N6124(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 5, 2024
* Quantity
Unit Price$ 1.6900
Ext. Price$ 1.6900
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.6900$1.6900
50$1.3560$67.8000
100$1.1160$111.6000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusObsolete
Collector Current (Iᴄ)@25°C4 A
Collector Cut-off Current (Iᴄᴇs)(Max.)1mA
DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 1.5A, 2V
Frequency - Transition2.5MHz
MfrCentral Semiconductor Corp
Mounting StyleThrough Hole
Operating Temperature-65°C ~ 150°C (TJ)
Power - Max40 W
Package Type (Mfr.)TO-220-3
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic1.4V @ 1A, 4A
Collector-Emitter Breakdown Voltage (Max.)80 V
Package / CaseTO-220-3
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)