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2N5878 PBFREEBipolar (BJT) Transistor NPN 80 V 10 A 4MHz 150 W Through Hole TO-3

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ABRmicro #.ABR2045-2N5878-767418
ManufacturerCentral Semiconductor
MPN #.2N5878 PBFREE
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheet2N5875 thru 2N5877(PDF)
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In Stock: 16
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 6, 2024
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Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusObsolete
Collector Current (Iᴄ)@25°C10 A
Collector Cut-off Current (Iᴄᴇs)(Max.)1mA
DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 4A, 4V
Frequency - Transition4MHz
MfrCentral Semiconductor Corp
Mounting StyleThrough Hole
Operating Temperature-65°C ~ 200°C (TJ)
Power - Max150 W
Package Type (Mfr.)TO-3
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic3V @ 2.5A, 10A
Collector-Emitter Breakdown Voltage (Max.)80 V
Package / CaseTO-204AA, TO-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
2N5875 thru 2N5877
Environmental Information
RoHS Cert
PCN Assembly/Origin
Wafer Fab Change 02/Jun/2021
PCN Obsolescence/ EOL
DK OBS NOTICEEOL 2-10-23
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)