2N5301 PBFREEBipolar (BJT) Transistor NPN 40 V 30 A 4MHz 200 W Through Hole TO-3
1:$5.1090
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ABRmicro #.ABR2045-2N5301-795633
ManufacturerCentral Semiconductor
MPN #.2N5301 PBFREE
Estimated Lead Time-
SampleGet Free Sample
Datasheet
Power Transistors To-3 Case(PDF)
Power Transistors To-3 Case(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 6, 2024
* Quantity
Unit Price$ 5.1090
Ext. Price$ 5.1090
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$5.1090$5.1090
20$4.3770$87.5400
100$3.6470$364.7000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusObsolete
Collector Current (Iᴄ)@25°C30 A
Collector Cut-off Current (Iᴄᴇs)(Max.)-
DC Current Gain (hFE) (Min) @ Ic, Vce-
Frequency - Transition4MHz
MfrCentral Semiconductor Corp
Mounting StyleThrough Hole
Operating Temperature-
Power - Max200 W
Package Type (Mfr.)TO-3
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic-
Collector-Emitter Breakdown Voltage (Max.)40 V
Package / CaseTO-204AA, TO-3
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Datasheets
Environmental Information
PCN Assembly/Origin
PCN Obsolescence/ EOL
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)