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2N5209 PBFREEBipolar (BJT) Transistor NPN 50 V 50 mA 30MHz 350 mW Through Hole TO-92-3
1:$0.4020
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-2N5209-699508
ManufacturerCentral Semiconductor
MPN #.2N5209 PBFREE
Estimated Lead Time10 Weeks
SampleGet Free Sample
Datasheet2N5209,2N5210(PDF)
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In Stock: 3677
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Bulk
Shipping DateNovember 5, 2024
* Quantity
Unit Price$ 0.4020
Ext. Price$ 0.4020
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.4020$0.4020
10$0.3470$3.4700
100$0.2410$24.1000
500$0.2010$100.5000
1000$0.1880$188.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 600mA 200MHz Through Hole TO-78-6 Technical Specifications
Series-
Packaging
Bulk
Lifecycle StatusActive
Collector Current (Iᴄ)@25°C50 mA
Collector Cut-off Current (Iᴄᴇs)(Max.)50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 100µA, 5V
Frequency - Transition30MHz
MfrCentral Semiconductor Corp
Mounting StyleThrough Hole
Operating Temperature-65°C ~ 150°C (TJ)
Power - Max350 mW
Package Type (Mfr.)TO-92-3
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic700mV @ 1mA, 10mA
Collector-Emitter Breakdown Voltage (Max.)50 V
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
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Environmental Information
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)