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2N5190Bipolar (BJT) Transistor NPN 40 V 4 A 2MHz 40 W Through Hole TO-126

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ABRmicro #.ABR2045-2N5190-707797
ManufacturerCentral Semiconductor
MPN #.2N5190
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheet2N5190(R) -2N5192(R)(PDF)
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In Stock: 7
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Bulk
Shipping DateNovember 6, 2024
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Technical Specifications
Series-
Packaging
Bulk
Lifecycle StatusObsolete
Collector Current (Iᴄ)@25°C4 A
Collector Cut-off Current (Iᴄᴇs)(Max.)1mA
DC Current Gain (hFE) (Min) @ Ic, Vce25 @ 1.5A, 2V
Frequency - Transition2MHz
MfrCentral Semiconductor Corp
Mounting StyleThrough Hole
Operating Temperature-65°C ~ 150°C (TJ)
Power - Max40 W
Package Type (Mfr.)TO-126
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic1.4V @ 1A, 4A
Collector-Emitter Breakdown Voltage (Max.)40 V
Package / CaseTO-225AA, TO-126-3
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Extended Links
Datasheets
2N5190(R) -2N5192(R)
Environmental Information
RoHS Cert
PCN Design/Specification
Mult Dev Wafer Chgs 11/Jun/2019
PCN Obsolescence/ EOL
Mult Device EOL 11/Aug/2016
Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)