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2N4399 PBFREEBipolar (BJT) Transistor PNP 60 V 30 A 4MHz 5 W Through Hole TO-3
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ABRmicro #.ABR2045-2N4399-760127
ManufacturerCentral Semiconductor
MPN #.2N4399 PBFREE
Estimated Lead Time-
SampleGet Free Sample
Datasheet2N4398,2N4399,2N5745(PDF)
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In Stock: 4
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 6, 2024
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Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 600mA 200MHz Through Hole TO-78-6 Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusObsolete
Collector Current (Iᴄ)@25°C30 A
Collector Cut-off Current (Iᴄᴇs)(Max.)5mA
DC Current Gain (hFE) (Min) @ Ic, Vce15 @ 15A, 2V
Frequency - Transition4MHz
MfrCentral Semiconductor Corp
Mounting StyleThrough Hole
Operating Temperature-65°C ~ 200°C (TJ)
Power - Max5 W
Package Type (Mfr.)TO-3
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic4V @ 6A, 30A
Collector-Emitter Breakdown Voltage (Max.)60 V
Package / CaseTO-204AA, TO-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)