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2N3250 PBFREEBipolar (BJT) Transistor PNP 40 V 200 mA 250MHz 360 mW Through Hole TO-18
1:$1.1350
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-2N3250-712790
ManufacturerCentral Semiconductor
MPN #.2N3250 PBFREE
Estimated Lead Time2 Weeks
SampleGet Free Sample
Datasheet2N3250(A),2N3251(A)(PDF)
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In Stock: 2373
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Bulk
Shipping DateNovember 5, 2024
* Quantity
Unit Price$ 1.1350
Ext. Price$ 1.1350
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.1350$1.1350
10$0.9440$9.4400
100$0.7520$75.2000
500$0.6790$339.5000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 600mA 200MHz Through Hole TO-78-6 Technical Specifications
Series-
Packaging
Bulk
Lifecycle StatusActive
Collector Current (Iᴄ)@25°C200 mA
Collector Cut-off Current (Iᴄᴇs)(Max.)-
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 10mA, 1V
Frequency - Transition250MHz
MfrCentral Semiconductor Corp
Mounting StyleThrough Hole
Operating Temperature-65°C ~ 200°C (TJ)
Power - Max360 mW
Package Type (Mfr.)TO-18
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic500mV @ 5mA, 50mA
Collector-Emitter Breakdown Voltage (Max.)40 V
Package / CaseTO-206AA, TO-18-3 Metal Can
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Datasheets
Environmental Information
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0075 (With an operating frequency not less than 100 MHz; No import duty applies)