ABR MCRO Logo
Image is for reference only, the actual product serves as the standard.
2N2221 PBFREEBipolar (BJT) Transistor NPN 30 V 800 mA 250MHz 1.2 W Through Hole TO-18

1:$0.8560

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-2N2221-700821
ManufacturerCentral Semiconductor
MPN #.2N2221 PBFREE
Estimated Lead Time99 Weeks
SampleGet Free Sample
DatasheetDatasheet2N2221,2N2222(PDF)
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed Authenticity
Technical Support
Fast Refund
Free Shipping (over $960)
Issue an Invoice
24/7 Manual Service
In Stock: 87
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Bulk
Shipping DateNovember 5, 2024
* Quantity
Unit Price$ 0.8560
Ext. Price$ 0.8560
Add To Cart
Send Target Price
* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
2000$0.8560$1712.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Related Parts
2N3393 PBFREE$0.3300
Central Semiconductor
Bipolar (BJT) Transistor NPN 25 V 120MHz Through Hole TO-92-3
2N5058 PBFREE$3.7410
Central Semiconductor
Bipolar (BJT) Transistor NPN 300 V 150 mA 160MHz 1 W Through Hole TO-39
2N5109 PBFREEN/A
Central Semiconductor
RF Transistor NPN 20V 400mA 1.2GHz 1W Through Hole TO-39
2N5794N/A
Central Semiconductor
Bipolar (BJT) Transistor Array 2 NPN (Dual) 40V 600mA 250MHz 600mW Through Hole TO-78-6
BC857BR TR PBFREE$0.3380
Central Semiconductor
Bipolar (BJT) Transistor PNP 45 V 100 mA 100MHz 350 mW Surface Mount SOT-23
MD2905N/A
Central Semiconductor
Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 600mA 200MHz Through Hole TO-78-6
TIP41B PBFREEN/A
Central Semiconductor
Bipolar (BJT) Transistor NPN 80 V 6 A 3MHz 65 W Through Hole TO-220-3
Technical Specifications
Series-
Packaging
Bulk
Lifecycle StatusActive
Collector Current (Iᴄ)@25°C800 mA
Collector Cut-off Current (Iᴄᴇs)(Max.)10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 150mA, 10V
Frequency - Transition250MHz
MfrCentral Semiconductor Corp
Mounting StyleThrough Hole
Operating Temperature-65°C ~ 200°C (TJ)
Power - Max1.2 W
Package Type (Mfr.)TO-18
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic1.6V @ 50mA, 500mA
Collector-Emitter Breakdown Voltage (Max.)30 V
Package / CaseTO-206AA, TO-18-3 Metal Can
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
2N2221,2N2222
Environmental Information
RoHS Cert
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL LevelNot Required
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0075 (With an operating frequency not less than 30 MHz; No import duty applies)