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2N1131 PBFREEBipolar (BJT) Transistor PNP 50 V 600 mA 50MHz 2 W Through Hole TO-39

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ABRmicro #.ABR2045-2N1131-765990
ManufacturerCentral Semiconductor
MPN #.2N1131 PBFREE
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheet2N1131(PDF)
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In Stock: 13
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Shipping DateNovember 6, 2024
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Technical Specifications
Series-
Packaging
Bulk
Lifecycle StatusObsolete
Collector Current (Iᴄ)@25°C600 mA
Collector Cut-off Current (Iᴄᴇs)(Max.)100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 150mA, 10V
Frequency - Transition50MHz
MfrCentral Semiconductor Corp
Mounting StyleThrough Hole
Operating Temperature-65°C ~ 200°C (TJ)
Power - Max2 W
Package Type (Mfr.)TO-39
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic1.5V @ 15mA, 150mA
Collector-Emitter Breakdown Voltage (Max.)50 V
Package / CaseTO-205AD, TO-39-3 Metal Can
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Datasheets
2N1131
Environmental Information
RoHS Cert
PCN Obsolescence/ EOL
2N1131 23/Feb/2022
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL LevelNot Required
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0075 (With an operating frequency not less than 30 MHz; No import duty applies)