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BLS9G3135LS-115URF Mosfet 50 V 600 mA 3.1GHz ~ 3.5GHz 11dB 115W CDFM2

1:$88.6480

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ABRmicro #.ABR285-BLS9G3-1681
ManufacturerAmpleon USA Inc.
MPN #.BLS9G3135LS-115U
Estimated Lead Time16 Weeks
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DatasheetDatasheetBLS9G3135L(S)-1... (PDF)
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In Stock: 39
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tray
Shipping DateDecember 23, 2024
* Quantity
Unit Price$88.6480
Ext. Price$88.6480
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$88.6480$88.6480
20$84.0710$1681.4280
40$81.7850$3271.3950
80$76.0650$6085.2350
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
Series-
Packaging
Tray
Lifecycle StatusActive
Base Product NumberBLS9
Current - Test600 mA
Current Rating (Amps)-
Frequency3.1GHz ~ 3.5GHz
Gain11dB
Mounting StyleChassis Mount
Noise Figure-
Output Power115W
Package Type (Mfr.)CDFM2
TechnologyLDMOS
Rated Voltage28 V
Voltage - Test50 V
Package / CaseSOT-1135B
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
BLS9G3135L(S)-115
Environmental Information
Ampleon REACHAmpleon RoHS
PCN Packaging
Mult Dev Label Chgs 24/Apr/2020
Video File
Ampleon Company Video - The Leading Global Partner...
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0075 (With an operating frequency not less than 30 MHz; No import duty applies)
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RF Mosfet 50 V 600 mA 3.1GHz ~ 3.5GHz 11dB 115W CDFM2
Additional Details
The BLS9G3135LS-115U, manufactured by Ampleon USA Inc., is a robust RF MOSFET designed to operate at a frequency range of 3.1GHz to 3.5GHz. It features a drain-source voltage rating of 50 volts, a continuous drain current of 600 mA, and a power output of 115 watts. The device provides a gain of 11 dB and utilizes LDMOS technology. It supports a collector-drain breakdown voltage of 28 volts, making it suitable for high-power applications. The transistor is housed in a CDFM2 package, ensuring efficient thermal management and reliability in demanding RF environments.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.