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BLA9H0912LS-250URF Mosfet 50 V 100 mA 960MHz ~ 1.215GHz 22dB 250W SOT502B

1:$209.4660

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR285-BLA9H0-95039
ManufacturerAmpleon USA Inc.
MPN #.BLA9H0912LS-250U
Estimated Lead Time16 Weeks
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DatasheetDatasheetBLA9H0912L(S)-2... (PDF)
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In Stock: 34
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tray
Shipping DateDecember 24, 2024
* Quantity
Unit Price$209.4660
Ext. Price$209.4660
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$209.4660$209.4660
20$200.6160$4012.3190
40$196.1910$7847.6250
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
Series-
Packaging
Tray
Lifecycle StatusActive
Base Product NumberBLA9
Current - Test100 mA
Current Rating (Amps)1.4µA
Frequency960MHz ~ 1.215GHz
Gain22dB
Mounting StyleChassis Mount
Noise Figure-
Output Power250W
Package Type (Mfr.)SOT502B
TechnologyLDMOS
Rated Voltage106 V
Voltage - Test50 V
Package / CaseSOT-502B
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
BLA9H0912L(S)-250(G) Datasheet
Environmental Information
Ampleon REACHAmpleon RoHS
PCN Packaging
Mult Dev Label Chgs 24/Apr/2020
Product Brief
RF Power Solutions Selection Guide
Video File
Ampleon Company Video - The Leading Global Partner...
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0075 (With an operating frequency not less than 30 MHz; No import duty applies)
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Additional Details
The BLA9H0912LS-250U is a high-performance RF MOSFET manufactured by Ampleon USA Inc. It is designed to operate within the frequency range of 960MHz to 1.215GHz, delivering a power output of 250 watts with a gain of 22dB. This device is constructed with LDMOS technology, providing reliable performance at a maximum voltage of 106 V, and can handle up to 100 mA of current. The part is housed in a SOT502B package, ensuring a compact form factor suitable for various high-frequency applications. Additionally, it exhibits a low typical drain-source leakage current of 1.4µA, contributing to its efficiency and robustness in demanding RF environments.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.