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BLS9G3135L-115URF Mosfet 50 V 600 mA 3.1GHz ~ 3.5GHz 11dB 115W CDFM2

1:$105.6760

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ABRmicro #.ABR285-BLS9G3-76406
ManufacturerAmpleon USA Inc.
MPN #.BLS9G3135L-115U
Estimated Lead Time16 Weeks
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In Stock: 25
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tray
Shipping DateDecember 24, 2024
* Quantity
Unit Price$105.6760
Ext. Price$105.6760
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$105.6760$105.6760
20$100.6780$2013.5650
40$98.5360$3941.4500
80$93.5380$7483.0600
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
Series-
Packaging
Tray
Lifecycle StatusActive
Base Product NumberBLS9
Current - Test600 mA
Current Rating (Amps)-
Frequency3.1GHz ~ 3.5GHz
Gain11dB
Mounting StyleChassis Mount
Noise Figure-
Output Power115W
Package Type (Mfr.)CDFM2
TechnologyLDMOS
Rated Voltage28 V
Voltage - Test50 V
Package / CaseSOT-1135A
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0075 (With an operating frequency not less than 30 MHz; No import duty applies)
Related Parts
RF Mosfet 50 V 100 mA 960MHz ~ 1.215GHz 22dB 250W CDFM2
RF Mosfet 50 V 100 mA 960MHz ~ 1.215GHz 20dB 700W CDFM2
RF Mosfet 50 V 100 mA 960MHz ~ 1.215GHz 20dB 700W SOT502A
RF Mosfet 50 V 100 mA 960MHz ~ 1.215GHz 22dB 250W SOT502B
RF Mosfet 50 V 100 mA 960MHz ~ 1.215GHz 20dB 700W CDFM2
RF Mosfet 50 V 100 mA 960MHz ~ 1.215GHz 20dB 700W SOT502B
RF Mosfet 50 V 600 mA 3.1GHz ~ 3.5GHz 11dB 115W CDFM2
Additional Details
The BLS9G3135L-115U is a high-power RF MOSFET manufactured by Ampleon USA Inc. It is designed to operate within the frequency range of 3.1GHz to 3.5GHz, providing a power output of 115 watts. The component features a gain of 11dB and can handle a current of up to 600 mA while operating at a voltage of 50 V. Additionally, it employs laterally diffused metal-oxide-semiconductor (LDMOS) technology, commonly used for its efficiency in RF amplification. Despite being listed with an operating voltage of 50 V, one of the part's specifications points to a nominal voltage of 28 V.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.