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BLA9H0912LS-700GURF Mosfet 50 V 100 mA 960MHz ~ 1.215GHz 20dB 700W CDFM2

1:$292.4530

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR285-BLA9H0-49411
ManufacturerAmpleon USA Inc.
MPN #.BLA9H0912LS-700GU
Estimated Lead Time16 Weeks
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DatasheetDatasheetBLA9H0912L(S)-7... (PDF)
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In Stock: 47
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tray
Shipping DateDecember 24, 2024
* Quantity
Unit Price$292.4530
Ext. Price$292.4530
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$292.4530$292.4530
20$283.6600$5673.1980
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
Series-
Packaging
Tray
Lifecycle StatusActive
Base Product NumberBLA9
Current - Test100 mA
Current Rating (Amps)2.8µA
Frequency960MHz ~ 1.215GHz
Gain20dB
Mounting StyleChassis Mount
Noise Figure-
Output Power700W
Package Type (Mfr.)CDFM2
TechnologyLDMOS
Rated Voltage106 V
Voltage - Test50 V
Package / CaseSOT-502E
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
BLA9H0912L(S)-700(G) Datasheet
Environmental Information
Ampleon REACHAmpleon RoHS
PCN Packaging
Mult Dev Label Chgs 24/Apr/2020
Product Brief
RF Power Solutions Selection Guide
Video File
Ampleon Company Video - The Leading Global Partner...
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0075 (With an operating frequency not less than 30 MHz; No import duty applies)
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Additional Details
The BLA9H0912LS-700GU, manufactured by Ampleon USA Inc., is a high-power RF MOSFET designed for efficient amplification in the frequency range of 960 MHz to 1.215 GHz. It operates with a 50 V supply voltage and is capable of delivering up to 700 watts of power. Featuring a gain of 20 dB, this device employs LDMOS technology and draws a current of 100 mA. The part is characterized by its current of 2.8 µA and a breakdown voltage of 106 V, making it suitable for robust performance in RF amplification tasks.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.