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BLP0408H9S30ZRF Mosfet 50 V 100 mA 400MHz ~ 860MHz 20.2dB 30W SOT-1482-1

1:$30.3810

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR285-BLP040-169145
ManufacturerAmpleon USA Inc.
MPN #.BLP0408H9S30Z
Estimated Lead Time16 Weeks
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DatasheetDatasheetBLP0408H9S30 (PDF)
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In Stock: 10
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateDecember 24, 2024
* Quantity
Unit Price$30.3810
Ext. Price$30.3810
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$30.3810$30.3810
10$28.0170$280.1710
25$26.7570$668.9230
100$23.9240$2392.4310
250$22.8230$5705.6250
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberBLP0408
Current - Test100 mA
Current Rating (Amps)1.4µA
Frequency400MHz ~ 860MHz
Gain20.2dB
Mounting StyleSurface Mount
Noise Figure-
Output Power30W
Package Type (Mfr.)SOT-1482-1
TechnologyLDMOS
Rated Voltage108 V
Voltage - Test50 V
Package / CaseSOT-1482-1
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
BLP0408H9S30
Environmental Information
Ampleon REACHAmpleon RoHS
Video File
Ampleon Company Video - The Leading Global Partner...
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level3 (168 Hours, ≤ 30°C/60% RH), Vacuum Sealing
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0075 (With an operating frequency not less than 30 MHz; No import duty applies)
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Additional Details
The BLP0408H9S30Z is an RF MOSFET manufactured by Ampleon USA Inc., designed for effective operation within the frequency range of 400MHz to 860MHz. It features a power output of 30W and a power gain of 20.2dB, suitable for high-frequency applications requiring reliable amplification. The device operates at a drain voltage of 50V and supports a current of 100mA. With a low drain-source leakage current of 1.4µA, it is configured in a compact SOT-1482-1 package, making it suitable for integration into various electronic circuits. The component utilizes LDMOS technology, which enhances its efficiency and performance in RF amplification tasks.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.