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BLC9H10XS-606AZRF Mosfet 48 V 1.8 A 616MHz ~ 960MHz 18dB 600W SOT1250-4

1:$92.2210

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR285-BLC9H1-147953
ManufacturerAmpleon USA Inc.
MPN #.BLC9H10XS-606AZ
Estimated Lead Time13 Weeks
SampleGet Free Sample
DatasheetDatasheetBLC9H10XS-606A (PDF)
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In Stock: 10
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tray
Shipping DateDecember 24, 2024
* Quantity
Unit Price$92.2210
Ext. Price$92.2210
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
20$92.2210$1844.4150
40$89.7110$3588.4450
100$83.4370$8343.7060
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
Series-
Packaging
Tray
Lifecycle StatusActive
Base Product NumberBLC9
Configuration2 N-Channel (Dual) Common Source
Current - Test1.8 A
Current Rating (Amps)-
Frequency616MHz ~ 960MHz
Gain18dB
Mounting StyleSurface Mount
Noise Figure-
Output Power600W
Package Type (Mfr.)SOT1250-4
TechnologyLDMOS
Voltage - Test48 V
Package / CaseSOT-1250-4
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
BLC9H10XS-606A
Environmental Information
Ampleon REACHAmpleon RoHS
PCN Assembly/Origin
Diebond Process Change 24/Jul/2023
PCN Design/Specification
Mult Dev Die/Flange Chgs 27/Jan/2022
Video File
Ampleon Company Video - The Leading Global Partner...
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level3 (168 Hours, ≤ 30°C/60% RH), Vacuum Sealing
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0075 (With an operating frequency not less than 30 MHz; No import duty applies)
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Additional Details
The BLC9H10XS-606AZ is an RF MOSFET transistor manufactured by Ampleon USA Inc. This component operates at a voltage of 48V and provides a current of 1.8A, with a frequency range spanning from 616MHz to 960MHz. It delivers a power output of 600W and offers a gain of 18dB. The device features a dual N-channel configuration with a common source design, utilizing LDMOS technology for enhanced performance. Encased in a compact SOT1250-4 package, this part is well-suited for high-power RF amplification tasks.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.