AOWF4N60N-Channel 600 V 4A (Tc) 25W (Tc) Through Hole TO-262F
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ABRmicro #.ABR2045-AOWF4N-611756
ManufacturerAlpha & Omega Semiconductor
MPN #.AOWF4N60
Estimated Lead Time-
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Datasheet
AOW(F)4N60(PDF)
AOW(F)4N60(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 8, 2024
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Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberAOWF4
Continuous Drain Current (ID) @ 25°C4A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)14.5 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)640 pF @ 25 V
MfrAlpha & Omega Semiconductor Inc.
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation25W (Tc)
RDS(on) Drain-to-Source On Resistance2.3Ohm @ 2A, 10V
Package Type (Mfr.)TO-262F
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.5V @ 250µA
Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
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PCN Design/Specification
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Product Drawings
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)