Image is for reference only, the actual product serves as the standard.
AOT10T60PN-Channel 600 V 10A (Tc) 208W (Tc) Through Hole TO-220
N/A
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR278-AOT10T-573454
ManufacturerAlpha & Omega Semiconductor
MPN #.AOT10T60P
Estimated Lead Time-
SampleGet Free Sample
DatasheetAO(T,B.TF)10T60... (PDF)
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed Authenticity
Technical Support
Fast Refund
Free Shipping (over $960)
Issue an Invoice
24/7 Manual Service
In Stock: 7
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateDecember 24, 2024
* Quantity
Send Inquiry
Add To RFQ List
Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberAOT10
Continuous Drain Current (ID) @ 25°C10A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)40 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1595 pF @ 100 V
MfrAlpha & Omega Semiconductor Inc.
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation208W (Tc)
RDS(on) Drain-to-Source On Resistance700mOhm @ 5A, 10V
Package Type (Mfr.)TO-220
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-220-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
Environmental Information
PCN Assembly/Origin
PCN Obsolescence/ EOL
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The AOT10T60P is an N-Channel MOSFET manufactured by Alpha & Omega Semiconductor. It is designed to handle a drain-source voltage of up to 600 volts and a continuous drain current of 10 amperes when the case temperature is at its rated limit. This MOSFET features a total power dissipation of 208 watts and is housed in a TO-220 through-hole package, offering efficient thermal management. Additionally, the device includes a gate-source voltage capability of ±30 volts, with typical gate threshold values of 5 volts at a 250 microampere gate current, and a standard operation gate voltage of 10 volts, making it suitable for various high-voltage power switching applications.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.