AOW7S60N-Channel 600 V 7A (Tc) 104W (Tc) Through Hole TO-262
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ABRmicro #.ABR278-AOW7S6-574327
ManufacturerAlpha & Omega Semiconductor
MPN #.AOW7S60
Estimated Lead Time-
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Shipping DateDecember 24, 2024
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Technical Specifications
SeriesaMOS™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberAOW7
Continuous Drain Current (ID) @ 25°C7A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)8.2 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)372 pF @ 100 V
MfrAlpha & Omega Semiconductor Inc.
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation104W (Tc)
RDS(on) Drain-to-Source On Resistance600mOhm @ 3.5A, 10V
Package Type (Mfr.)TO-262
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3.9V @ 250µA
Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
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PCN Assembly/Origin
PCN Obsolescence/ EOL
Product Drawings
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The AOW7S60 is a semiconductor component from Alpha & Omega Semiconductor, featuring an N-Channel MOSFET design. This device can handle up to 600 volts and 7 amperes at its thermal capacity (Tc), with a power dissipation capability of 104 watts when properly mounted in a through-hole TO-262 package. It operates with a gate threshold voltage of 10 volts and has a gate charge of 8.2 nC at this voltage, making it suitable for efficient switching operations in high-voltage environments.
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