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AON6578N-Channel 30 V 28A (Ta), 70A (Tc) 5.6W (Ta), 35W (Tc) Surface Mount 8-DFN (5x6)

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ABRmicro #.ABR278-AON657-574545
MPN #.AON6578
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DatasheetDatasheetAON6578 (PDF)
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In Stock: 89
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Packaging
Tape & Reel (TR)
Shipping DateDecember 24, 2024
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusActive
Base Product NumberAON657
Continuous Drain Current (ID) @ 25°C28A (Ta), 70A (Tc)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)30 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1340 pF @ 15 V
MfrAlpha & Omega Semiconductor Inc.
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation5.6W (Ta), 35W (Tc)
RDS(on) Drain-to-Source On Resistance4.4mOhm @ 20A, 10V
Package Type (Mfr.)8-DFN (5x6)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.4V @ 250µA
Package / Case8-PowerSMD, Flat Leads
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Environmental Information
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
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Additional Details
The AON6578 is an N-channel MOSFET manufactured by Alpha & Omega Semiconductor designed for efficient power management in electronic applications. It operates with a voltage rating of 30V and supports a current of up to 70A when used with proper thermal conditions. The device is capable of dissipating 35W when properly mounted. It features a gate-source voltage rating of ±20V and a gate charge of 30 nC at 10V. This MOSFET is housed in a compact 8-DFN package, measuring 5mm by 6mm, suitable for surface-mount technology, which aids in efficient space utilization and thermal management in circuit designs.
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