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AON6448N-Channel 80 V 11A (Ta), 65A (Tc) 2.5W (Ta), 83W (Tc) Surface Mount 8-DFN (5x6)

1:$1.2740

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ABRmicro #.ABR278-AON644-573173
MPN #.AON6448
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In Stock: 112
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateDecember 23, 2024
* Quantity
Unit Price$1.2740
Ext. Price$1.2740
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Qty.Unit PriceExt. Price
1$1.2740$1.2740
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
SeriesSDMOS™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusNRND(Not Recommended for New Designs)
Base Product NumberAON644
Continuous Drain Current (ID) @ 25°C11A (Ta), 65A (Tc)
Drain-to-Source Voltage (VDS)80 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))7V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)53 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)3100 pF @ 40 V
MfrAlpha & Omega Semiconductor Inc.
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2.5W (Ta), 83W (Tc)
RDS(on) Drain-to-Source On Resistance9.6mOhm @ 10A, 10V
Package Type (Mfr.)8-DFN (5x6)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±25V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3.7V @ 250µA
Package / Case8-PowerSMD, Flat Leads
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
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AOT10B65M2$1.7010
IGBT 650 V 20 A 150 W Through Hole TO-220
N-Channel 600 V 10A (Tc) 208W (Tc) Through Hole TO-220
N-Channel 500 V 8A (Tc) 38W (Tc) Through Hole TO-220F
N-Channel 600 V 7A (Tc) 104W (Tc) Through Hole TO-262
Additional Details
The AON6448 is an N-Channel MOSFET manufactured by Alpha & Omega Semiconductor, designed for surface mount applications. It supports a voltage up to 80 V and a current of 11A under ambient temperature (Ta), and up to 65A when mounted on a temperature-controlled setup (Tc). The power dissipation is rated at 2.5W for ambient conditions and can handle up to 83W in controlled conditions. Encased in an 8-DFN (5x6) package, it features a total gate charge of 53 nC at 10 V, input capacitance of 3100 pF at 40 V, and a threshold voltage of 3.7V at 250µA. This specification ensures its suitability for a variety of power management tasks.
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