AOWF11N60N-Channel 600 V 11A (Tc) 27.8W (Tc) Through Hole TO-262F
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ABRmicro #.ABR278-AOWF11-595203
ManufacturerAlpha & Omega Semiconductor
MPN #.AOWF11N60
Estimated Lead Time-
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Shipping DateDecember 24, 2024
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Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberAOWF11
Continuous Drain Current (ID) @ 25°C11A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)37 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1990 pF @ 25 V
MfrAlpha & Omega Semiconductor Inc.
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation27.8W (Tc)
RDS(on) Drain-to-Source On Resistance650mOhm @ 5.5A, 10V
Package Type (Mfr.)TO-262F
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.5V @ 250µA
Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
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PCN Design/Specification
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Product Drawings
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
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Additional Details
The AOWF11N60 by Alpha & Omega Semiconductor is an N-channel MOSFET designed for high-voltage applications, featuring a 600 V breakdown voltage and a continuous current capability of 11A when mounted on a suitable heat sink. Encased in a TO-262F package for through-hole mounting, it offers a power dissipation of 27.8W. The device exhibits a typical input capacitance of 1990 pF at 25 V and a gate threshold voltage of 4.5V at a gate current of 250µA, making it suitable for efficient switching in various power electronics systems.
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