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AOW2502N-Channel 150 V 16A (Ta), 106A (Tc) 6.2W (Ta), 277W (Tc) Through Hole TO-262

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ABRmicro #.ABR278-AOW250-596411
MPN #.AOW2502
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DatasheetDatasheetAOW2502 (PDF)
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In Stock: 11
Shipped From Shenzhen or Hong Kong Warehouses
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Shipping DateDecember 24, 2024
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Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberAOW25
Continuous Drain Current (ID) @ 25°C16A (Ta), 106A (Tc)
Drain-to-Source Voltage (VDS)150 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)60 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)3010 pF @ 75 V
MfrAlpha & Omega Semiconductor Inc.
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation6.2W (Ta), 277W (Tc)
RDS(on) Drain-to-Source On Resistance10.7mOhm @ 20A, 10V
Package Type (Mfr.)TO-262
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5.1V @ 250µA
Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
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Additional Details
The AOW2502 is an N-Channel MOSFET manufactured by Alpha & Omega Semiconductor, designed for efficient power management. It operates at a maximum voltage of 150 V and can handle a current of 16A in free air (Ta) or up to 106A when properly mounted (Tc). The device supports a power dissipation of 6.2W in free air and 277W when mounted to a suitable heat sink. Housed in a TO-262 through-hole package, this MOSFET offers a threshold voltage of 5.1V at a gate current of 250µA. It features an input capacitance of 3010 pF at a test voltage of 75 V, making it suitable for various power conversion and switching applications.
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