AOU7S65N-Channel 600 V 7A (Tc) 89W (Tc) Through Hole TO-251-3
N/A
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ABRmicro #.ABR2045-AOU7S6-621472
ManufacturerAlpha & Omega Semiconductor
MPN #.AOU7S65
Estimated Lead Time-
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Datasheet
AOx7S65(PDF)
AOx7S65(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 8, 2024
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Technical Specifications
SeriesaMOS™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberAOU7
Continuous Drain Current (ID) @ 25°C7A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)9.2 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)434 pF @ 100 V
MfrAlpha & Omega Semiconductor Inc.
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation89W (Tc)
RDS(on) Drain-to-Source On Resistance650mOhm @ 3.5A, 10V
Package Type (Mfr.)TO-251-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA
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Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)